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Flash memory IC: M29W008AB90N1 Description: ST Micros , 8M bit, low voltage flash memory, 90 nano seconconds 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte Status Register bits and Ready/Busy Output SECURITY PROTECTION MEMORY AREA INSTRUC TIONS ADDRESS CODING: 3 digits MEMORY BLOCKS Boot Block (Top or Bottom location) Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, M29W008AT: D2h Bottom Device Code, M29W008AB: DCh (A lot of 5 units flash memory ic M29W008AB90N1 is the responsibility of Alvin Sweeney) |
Asweeney@cedar--rapids.com (Alvin Sweeney) for more information.
