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1 Mbit (128K x8) Page-Mode EEPROM P/N SST29LE010 The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE010 conform to JEDEC standard pinouts for byte-wide memories. Featuring high performance Page-Write, the SST29EE/LE/ VE010 provide a typical Byte-Write time of 39 ?sec. The entire memory, i.e., 128 KBytes, can be written page-bypage in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE/LE/VE010 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE/LE/VE010 are offered with a guaranteed Page- Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years. * You get one new EEPROM P/N SST29LE010 * Silicon Storage Technology * Contact us for return instructions. * Please report problems within 3-days of receiving merchandise. Items must be returned within 7-days. * Please allow time to respond to all e-mails due to the volume we receive. * If you do not receive a return message, please check your SPAM/BULK folder. * Wait until all items have completed. (1 mbit (128K X8) page-mode eeprom p/n SST29LE010 is the responsibility of Candice Kline) |
C_kline@cedar--rapids.com (Candice Kline) for more information.
